Live opening · Posted 7 days ago
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About the role
Description supplied by the original job listing.
Bachelor’s/Master’s/PhD in Electrical Engineering, Physics, Materials Science, or related field
3–10 years of experience in semiconductor ion implantation process.
Strong understanding of:
Ion-solid interactions (range, straggle, channeling)
Dopant diffusion and activation
Implant damage and annealing mechanisms
Roles and Responsibilities
Develop and optimize ion implantation processes for CMOS, power devices (Si, SiC, GaN), and advanced nodes
Define implant conditions: energy, dose, tilt, rotation, species selection
Work on junction engineering, LDD/HDD implants, well formation, and threshold voltage tuning
Perform process characterization using SIMS, SRP, sheet resistance, and junction depth analysis
Optimize beam tuning parameters: beam current, uniformity, scan, and dose control
Work on channeling control and damage engineering (pre-amorphization implants, tilt/rotation strategies)
Develop and maintain implant recipes on tools such as Axcelis, Applied Materials, or equivalent
Troubleshoot issues related to:
Dose non-uniformity
Beam instability
Charging damage
Particle contamination
Collaborate with integration teams for annealing (RTA/spike) and activation optimization
Drive SPC, yield improvement, and defect reduction initiatives
Perform DOE, data analysis, and statistical modeling (JMP, Python, or equivalent)
Support tool matching, qualification, and production ramp-up
Work arrangement
No
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